科学研究

Silicon epitaxy on H-terminated Si (100) surfaces at 250℃

Xiao Deng, Pradeep Namboodiri, Kai Li, et al. Applied Surface Science,2016,378:301-307.

发布时间:2016-08-15 发布者: 来源: 浏览:

Xiao Deng, Pradeep Namboodiri, Kai Li, et al. Applied Surface Science,2016,378:301-307.