Atomic layer deposition
Model: NCE-200R
Brand: Nafeng Microelectronics Equipment Company
Introduction: Atomic layer deposition is a method of plating substances layer by layer on the surface of the substrate in the form of a single atomic film through chemical reaction, which is a kind of chemical vapor deposition. It is characterized by self-limiting gas-phase film-forming technology based on surface chemical reactions. Unlike traditional physical vapor deposition, ALD has the characteristics of sidewall growth of extended structures, so it can fill various holes and defects well. At the same time, thanks to the method of atomic film formation, its control accuracy on the thickness of the film layer is very high, which can reach more than 0.1nm. Atomic layer deposition is used to grow compounds, mainly including TiO2, HfO2, Al2O3, etc.
