Reactive ion etching machine

Model: Plasma Pro 100 Cobra

Brand: Oxford Instruments

Introduction: Reactive ion etching is a dry etching technology with strong anisotropy and high selectivity. It is etched using molecular gas plasma in a vacuum system, and ion-induced chemical reactions are used to achieve anisotropic etching. The maximum etching area is 8 inch wafers, etching materials include conventional oxide, silicon and silicon-based materials, and supporting gases include various fluorine-based gases and argon. At the same time, low temperature can be used to achieve sub-zero low temperature etching, and the maximum etching aspect ratio is greater than 20:1.