Articles:
1.W. Luo, Q. Weng, M. Long, P. Wang, F. Gong, H. Fang, M. Luo, W. Wang, Z. Wang, D. Zheng, W. Hu*, X. Chen, and W. Lu*, Room-temperature single-photon detector based on single nanowire,Nano Letters18, 5439-5445 (2018)
2. L. Ye#, P. Wang#,W. Luo#, F. Gong, L. Liao, T. Liu, L. Tong, J. Zang, J. Xu*, and W. Hu*, Highly polarization sensitive infrared photodetector based on black phosphorus-on-WSe2photogate vertical heterostructure,Nano Energy37, 53-60 (2017). (#Contributed equally)
3. F. Gong#,W. Luo#, J. Wang, P. Wang, H. Fang, D. Zheng, N. Guo, J. Wang, M. Luo, J. C. Ho, X. Chen, W. Lu, L. Liao*, and W. Hu*, High-Sensitivity Floating-gate Phototransistors Based on WS2and MoS2,Advanced Functional Materials26, 6084–6090 (2016). (#Contributed equally)
Patents:
Fully Depleted Ferroelectric Side-Gate Single Nanowire Near-Infrared Photodetector and Fabrication Method
Patent Type: Invention Patent
Application/Patent Number: 201610893709.8
Inventors/Designers: Weida Hu, Jianlu Wang, Dingshan Zheng, Wenjin Luo, Peng Wang, Xiaoshuang Chen, Wei Lu