Research

Wenjin LuoMore

  • Title:Postdoctoral Researcher
  • Tel:wenjinluo@tongji.edu.cn
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Wenjin Luo was awarded the “Postdoctoral International Exchange Program” in 2019 and is currently visiting in Colorado Boulder, USA. His research focuses on ultrafast near-field dynamics of low-dimensional materials and their heterostructures. He has published more than ten research papers on Nano Letters, Advanced Functional Materials, Nano Energy with more than 1000 citations.

  • Personal Experience
  • Research Areas
  • Teach Courses
  • Research Project
  • Academic Achievements
  • Honors and Awards

Work Experience:

November 2019 - Present: Postdoctoral Researcher, Department of Physics, Colorado Boulder, USA

June 2019 - Present: Postdoctoral Researcher, School of Physics Science and Engineering, Tongji University, China

Education Experience:

September 2014 - June 2019: Ph.D. in Microelectronics and Solid-State Electronics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences

September 2009 - July 2013: Bachelor's Degree in Physics, Department of Physics, Hubei Normal University


Employing ultrafast lasers (femtosecond regime) in combination with super-high spatial resolution (nanometer scale) for near-field optical nonlinear measurements, primarily focusing on studying the various time scales and microscopic mechanisms of dynamics in low-dimensional materials and their heterostructures.


None.

Received the "Postdoctoral International Exchange Program" dispatch project in 2019

Articles:

1.W. Luo, Q. Weng, M. Long, P. Wang, F. Gong, H. Fang, M. Luo, W. Wang, Z. Wang, D. Zheng, W. Hu*, X. Chen, and W. Lu*, Room-temperature single-photon detector based on single nanowire,Nano Letters18, 5439-5445 (2018)

2. L. Ye#, P. Wang#,W. Luo#, F. Gong, L. Liao, T. Liu, L. Tong, J. Zang, J. Xu*, and W. Hu*, Highly polarization sensitive infrared photodetector based on black phosphorus-on-WSe2photogate vertical heterostructure,Nano Energy37, 53-60 (2017). (#Contributed equally)

3. F. Gong#,W. Luo#, J. Wang, P. Wang, H. Fang, D. Zheng, N. Guo, J. Wang, M. Luo, J. C. Ho, X. Chen, W. Lu, L. Liao*, and W. Hu*, High-Sensitivity Floating-gate Phototransistors Based on WS2and MoS2,Advanced Functional Materials26, 6084–6090 (2016). (#Contributed equally)


Patents:

Fully Depleted Ferroelectric Side-Gate Single Nanowire Near-Infrared Photodetector and Fabrication Method

Patent Type: Invention Patent

Application/Patent Number: 201610893709.8

Inventors/Designers: Weida Hu, Jianlu Wang, Dingshan Zheng, Wenjin Luo, Peng Wang, Xiaoshuang Chen, Wei Lu


In 2019, awarded as Outstanding Graduate of Shanghai Municipality.

In 2019, awarded the Special Prize by the President of the Chinese Academy of Sciences.